SQ3426EEV-T1-GE3
MOSFET N-CH 60V 7A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SQ3426EEV-T1-GE3 is an N-Channel Power MOSFET designed for efficient power management applications. This device features a 60V drain-source voltage (Vdss) and a continuous drain current of 7A (Tc) at 25°C. The SQ3426EEV-T1-GE3 offers a low on-resistance of 42mOhm maximum at 5A and 10V (Id, Vgs), contributing to reduced conduction losses. With a gate charge (Qg) of 12 nC maximum at 4.5V and input capacitance (Ciss) of 700 pF maximum at 30V (Vds), it supports fast switching characteristics. The MOSFET is housed in a compact 6-TSOP (SOT-23-6 Thin) package, suitable for surface mount assembly. This component is utilized in various industrial sectors including automotive and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 5A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 30 V |