SQ3426AEEV-T1_GE3
MOSFET N-CH 60V 7A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SQ3426AEEV-T1-GE3 is an N-Channel Power MOSFET designed for demanding applications. Featuring a 60V drain-source voltage and capable of up to 7A continuous drain current at 25°C, this component is built for robust performance. Its low on-resistance of 42mOhm at 5A and 10V gate-source drive ensures efficient power handling. The device boasts a 5W power dissipation capability (Tc) and a low gate charge of 12nC at 4.5V, facilitating faster switching speeds.
Qualified to AEC-Q101 standards and manufactured with automotive-grade materials, the SQ3426AEEV-T1-GE3 is suitable for automotive systems and other high-reliability environments. It is packaged in a compact 6-TSOP (SOT-23-6 Thin) for surface mounting and operates across a wide temperature range of -55°C to 175°C (TJ). This MOSFET technology is ideal for power management, motor control, and load switching circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 30 V |
| Qualification | AEC-Q101 |
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