SQ3419EV-T1_GE3
MOSFET P-CH 40V 6.9A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SQ3419EV-T1-GE3 is a P-channel TrenchFET® power MOSFET designed for demanding applications. This component features a drain-source breakdown voltage of 40V and supports a continuous drain current of 6.9A at 25°C (Tc). The device exhibits a maximum on-resistance of 58mOhm at 2.5A and 10V gate-source drive. With a maximum power dissipation of 5W (Tc), it is suitable for power management solutions in automotive systems. Key electrical characteristics include a gate charge of 11.3 nC at 4.5V and input capacitance of 990 pF at 20V. The SQ3419EV-T1-GE3 is provided in a 6-TSOP surface mount package, qualifying for AEC-Q101 automotive standards and operating across a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 990 pF @ 20 V |
| Qualification | AEC-Q101 |
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