SQ3419EEV-T1-GE3
MOSFET P-CH 40V 7.4A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® P-Channel Power MOSFET, SQ3419EEV-T1-GE3, offers 40V drain-source breakdown voltage and a continuous drain current of 7.4A at 25°C (Tc). This device features a maximum on-resistance of 50mOhm at 2.5A and 10V Vgs, with a gate charge (Qg) of 15 nC at 4.5V. The SQ3419EEV-T1-GE3 has a power dissipation of 5W (Tc) and a maximum junction temperature of 175°C. It is housed in a 6-TSOP (SOT-23-6 Thin) package, suitable for surface mounting. Key parameters include input capacitance (Ciss) of 1065 pF at 20V and a gate-source voltage range of ±12V. This MOSFET is utilized in industrial, automotive, and consumer electronics applications requiring efficient power switching.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1065 pF @ 20 V |