SQ3418EEV-T1-GE3
MOSFET N-CH 40V 8A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix presents the SQ3418EEV-T1-GE3, an N-Channel Power MOSFET designed for demanding applications. This component features a 40V drain-source voltage rating and a continuous drain current capability of 8A at 25°C (Tc). The SQ3418EEV-T1-GE3 offers a low on-resistance of 32mOhm at 5A and 10V, minimizing conduction losses. Key electrical characteristics include a gate charge of 11 nC at 4.5V and an input capacitance of 660 pF at 25V. Packaged in a compact 6-TSOP (SOT-23-6 Thin) for surface mounting, this MOSFET is suitable for power management, battery control, and power switching circuits across various industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 5A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 25 V |
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