SQ2362ES-T1_GE3
MOSFET N-CH 60V 4.3A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SQ2362ES-T1-GE3 is an N-Channel Power MOSFET featuring a 60V drain-source breakdown voltage and a continuous drain current rating of 4.3A at 25°C (Tc). This device offers a low on-resistance of 95mOhm maximum at 4.5A and 10V Vgs. The SQ2362ES-T1-GE3 is designed for efficient power switching applications, exhibiting a typical gate charge of 12 nC at 10V and an input capacitance of 550 pF at 30V. It is qualified to AEC-Q101 standards and operates across a wide temperature range of -55°C to 175°C (TJ). The component is packaged in a SOT-23-3 (TO-236) surface-mount configuration and is supplied on a tape and reel. This MOSFET is suitable for automotive applications.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 30 V |
| Qualification | AEC-Q101 |
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