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SQ2362ES-T1_GE3

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SQ2362ES-T1_GE3

MOSFET N-CH 60V 4.3A SOT23-3

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix TrenchFET® SQ2362ES-T1-GE3 is an N-Channel Power MOSFET featuring a 60V drain-source breakdown voltage and a continuous drain current rating of 4.3A at 25°C (Tc). This device offers a low on-resistance of 95mOhm maximum at 4.5A and 10V Vgs. The SQ2362ES-T1-GE3 is designed for efficient power switching applications, exhibiting a typical gate charge of 12 nC at 10V and an input capacitance of 550 pF at 30V. It is qualified to AEC-Q101 standards and operates across a wide temperature range of -55°C to 175°C (TJ). The component is packaged in a SOT-23-3 (TO-236) surface-mount configuration and is supplied on a tape and reel. This MOSFET is suitable for automotive applications.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4.3A (Tc)
Rds On (Max) @ Id, Vgs95mOhm @ 4.5A, 10V
FET Feature-
Power Dissipation (Max)3W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageSOT-23-3 (TO-236)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds550 pF @ 30 V
QualificationAEC-Q101

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