SQ2361EES-T1-GE3
MOSFET P-CH 60V 2.5A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SQ2361EES-T1-GE3 is a P-Channel TrenchFET® Power MOSFET designed for efficient power switching applications. This device features a 60V drain-source breakdown voltage (Vdss) and supports a continuous drain current of 2.5A (Tc). Its low on-resistance (Rds On) of 150mOhm maximum at 2.4A and 10V Vgs ensures minimal conduction losses. The SQ2361EES-T1-GE3 is housed in a compact SOT-23-3 (TO-236) surface-mount package, offering a power dissipation of 2W (Tc). Key electrical characteristics include a gate charge (Qg) of 17nC maximum at 10V Vgs and input capacitance (Ciss) of 545pF maximum at 30V Vds. It operates across a wide temperature range of -55°C to 175°C (TJ) and is supplied in Tape & Reel (TR) packaging. This component is commonly utilized in consumer electronics, industrial automation, and automotive systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 545 pF @ 30 V |