SQ2361AEES-T1_GE3
MOSFET P-CH 60V 2.8A SSOT23Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SQ2361AEES-T1-GE3 is a P-Channel TrenchFET® power MOSFET designed for demanding applications. This device features a 60V drain-source breakdown voltage and a continuous drain current capability of 2.8A at 25°C (Tc), with a maximum power dissipation of 2W (Tc). The SQ2361AEES-T1-GE3 exhibits a low on-resistance of 170mOhm maximum at 2.4A and 10V gate-source voltage. It is qualified to AEC-Q101 standards, making it suitable for automotive applications. Key parameters include a gate charge of 15nC typical at 10V and an input capacitance of 620pF maximum at 30V. The MOSFET is housed in a TO-236-3, SC-59, SOT-23-3 package, facilitating surface mounting and features a wide operating temperature range of -55°C to 175°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TA) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 30 V |
| Qualification | AEC-Q101 |
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