SQ2360EES-T1-GE3
MOSFET N-CH 60V 4.4A TO236Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SQ2360EES-T1-GE3 is an N-Channel Power MOSFET designed for efficient power management. This component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 4.4A at 25°C case temperature. The device exhibits a low on-resistance (Rds On) of 85mOhm maximum at 6A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 12 nC maximum at 10V and input capacitance (Ciss) of 370 pF maximum at 25V. This MOSFET is housed in a surface-mount SOT-23-3 (TO-236-3) package, supplied on cut tape. It is commonly utilized in applications such as power supplies, battery management, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 6A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 370 pF @ 25 V |