SQ2351ES-T1_GE3
MOSFET P-CH 20V 3.2A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SQ2351ES-T1-GE3 is a P-Channel TrenchFET® MOSFET designed for demanding applications. This component offers a 20V drain-source voltage and a continuous drain current of 3.2A at 25°C, with a maximum power dissipation of 2W (Tc). Featuring a low on-resistance of 115mOhm at 2.4A and 4.5V Vgs, it is optimized for efficient power switching. The Vishay Siliconix SQ2351ES-T1-GE3 is packaged in a SOT-23-3 (TO-236) surface mount configuration and operates across a wide temperature range of -55°C to 175°C. Its qualification to AEC-Q101 standards makes it suitable for automotive, industrial, and consumer electronics markets where high reliability is critical. The gate charge is rated at 5.5 nC maximum at 4.5V Vgs.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 115mOhm @ 2.4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 10 V |
| Qualification | AEC-Q101 |
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