SQ2351ES-T1_BE3
MOSFET P-CH 20V 3.2A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SQ2351ES-T1-BE3 is a P-Channel TrenchFET® Power MOSFET designed for demanding applications. This component offers a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 3.2A at 25°C (Tc). Key performance characteristics include a maximum on-resistance (Rds On) of 115mOhm at 2.4A and 4.5V Vgs. The SQ2351ES-T1-BE3 features a low gate charge (Qg) of 5.5 nC at 4.5V, contributing to efficient switching. The device is qualified to AEC-Q101 standards, indicating its suitability for automotive applications. Packaged in a SOT-23-3 (TO-236) surface-mount configuration, it supports a maximum power dissipation of 2W (Tc) and operates across a wide temperature range of -55°C to 175°C (TJ). Drive voltages for optimal Rds On performance are 2.5V (min) and 4.5V (max).
Additional Information
Series: TrenchFET®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 115mOhm @ 2.4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 10 V |
| Qualification | AEC-Q101 |
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