SQ2319ES-T1-GE3
MOSFET P-CH 40V 4.6A TO-236Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel Power MOSFET, part number SQ2319ES-T1-GE3, offers a 40V drain-source breakdown voltage and a continuous drain current capability of 4.6A at 25°C (Tc). This device features a maximum on-resistance (Rds(on)) of 75mOhm when driven at 3A and 10Vgs. The MOSFET exhibits a gate charge (Qg) of 16nC (max) at 10Vgs and an input capacitance (Ciss) of 620pF (max) at 25Vds. Fabricated using MOSFET technology, it is supplied in a SOT-23-3 (TO-236) surface mount package, presented in cut tape. This component is commonly utilized in industrial and automotive applications requiring efficient power switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 3A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 25 V |