SQ2318AES-T1_GE3
MOSFET N-CH 40V 8A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SQ2318AES-T1-GE3 is an N-Channel TrenchFET® power MOSFET designed for high-efficiency switching applications. This component features a 40 V drain-source voltage and a continuous drain current capability of 8 A at 25°C (Tc). The device exhibits a low on-resistance of 31 mOhm maximum at 7.9 A and 10 V Vgs, optimized for minimal conduction losses. Its low gate charge of 13 nC maximum at 10 V ensures efficient switching performance.
The SQ2318AES-T1-GE3 is housed in a compact SOT-23-3 (TO-236) surface-mount package, delivering a maximum power dissipation of 3 W (Tc). It operates across a wide temperature range from -55°C to 175°C (TJ) and is qualified to AEC-Q101 automotive standards, making it suitable for demanding automotive and industrial applications. Drive voltages range from 4.5 V to 10 V, with a maximum gate-source voltage of ±20V and a threshold voltage of 2.5 V at 250 µA. This Vishay Siliconix MOSFET is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 7.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 555 pF @ 10 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
