SQ2318AES-T1_BE3
MOSFET N-CH 40V 8A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® N-Channel MOSFET, part number SQ2318AES-T1-BE3, offers a 40V drain-source voltage and 8A continuous drain current at 25°C. This device features a low on-resistance of 31mOhm maximum at 7.9A and 10V Vgs, with a gate charge of 13nC maximum at 10V. Designed for efficient power switching, it is AEC-Q101 qualified and automotive grade, suitable for demanding automotive applications. The SQ2318AES-T1-BE3 utilizes Metal Oxide technology and is housed in a compact SOT-23-3 (TO-236) surface mount package, capable of dissipating up to 3W. It operates across an extended temperature range of -55°C to 175°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 7.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 553 pF @ 20 V |
| Qualification | AEC-Q101 |
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