SQ2310ES-T1_BE3
MOSFET N-CH 20V 6A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SQ2310ES-T1-BE3 is an N-Channel TrenchFET® power MOSFET designed for demanding applications. This device features a drain-source breakdown voltage (Vdss) of 20V and a continuous drain current (Id) capability of 6A at 25°C (Tc). With a maximum on-resistance (Rds On) of 30mOhm at 5A and 4.5V Vgs, it offers low conduction losses. The SQ2310ES-T1-BE3 supports gate drive voltages from 1.5V to 4.5V and has a typical gate charge (Qg) of 8.5 nC at 4.5V. Its low input capacitance (Ciss) is 485 pF at 10V. The MOSFET is housed in a SOT-23-3 (TO-236) surface-mount package, providing a power dissipation of 2W (Tc). This component is AEC-Q101 qualified for automotive applications, making it suitable for automotive power management systems. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 485 pF @ 10 V |
| Qualification | AEC-Q101 |
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