SQ2309ES-T1_GE3
MOSFET P-CH 60V 1.7A TO236Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® P-Channel Power MOSFET, part number SQ2309ES-T1-GE3, offers a 60V drain-source breakdown voltage and a continuous drain current rating of 1.7A at 25°C (Tc). This AEC-Q101 qualified component features a maximum on-resistance of 336mOhm at 3.8A and 10V Vgs. Its low gate charge of 8.5 nC at 10V Vgs and input capacitance of 265 pF at 25V Vds are optimized for efficient switching. The device is housed in a SOT-23-3 (TO-236) surface-mount package, capable of dissipating up to 2W (Tc). Operating across a temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for automotive applications.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 336mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 265 pF @ 25 V |
| Qualification | AEC-Q101 |
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