SQ2309ES-T1_BE3
MOSFET P-CH 60V 1.7A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel MOSFET, part number SQ2309ES-T1-BE3, from the TrenchFET® series. This AEC-Q101 qualified device features a 60V drain-to-source voltage and a continuous drain current of 1.7A at 25°C. The SOT-23-3 (TO-236) package offers a maximum power dissipation of 2W. Key parameters include a maximum Rds(on) of 335mOhm at 1.25A and 10V, and a gate charge of 8.5 nC at 10V. Operating temperature ranges from -55°C to 175°C. This component is suitable for automotive applications.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 335mOhm @ 1.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 265 pF @ 25 V |
| Qualification | AEC-Q101 |
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