SQ2308CES-T1_GE3
MOSFET N-CH 60V 2.3A SOT23Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SQ2308CES-T1-GE3 is an N-channel power MOSFET designed for high-efficiency applications. This AEC-Q101 qualified component features a 60V drain-source voltage and a continuous drain current capability of 2.3A at 25°C (Tc). The device offers a maximum on-resistance of 150mOhm at 2.3A and 10V Vgs. It is packaged in a compact SOT-23-3 (TO-236) surface-mount configuration, suitable for space-constrained designs. The maximum power dissipation is rated at 2W (Tc). Key electrical characteristics include a gate charge (Qg) of 5.3 nC at 10V and an input capacitance (Ciss) of 205 pF at 30V. This MOSFET is engineered for automotive applications, contributing to power management solutions in various vehicle systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 2.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 205 pF @ 30 V |
| Qualification | AEC-Q101 |
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