SQ2301ES-T1_GE3
MOSFET P-CH 20V 3.9A TO236Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
P-Channel 20 V 3.9A (Tc) 3W (Tc) Surface Mount TO-236 (SOT-23)
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TA) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 2.8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | TO-236 (SOT-23) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 425 pF @ 10 V |
| Qualification | AEC-Q101 |
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