SQ1470EH-T1-GE3
MOSFET N-CH 30V 2.8A SC70Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SQ1470EH-T1-GE3 is an N-Channel Power MOSFET designed for efficient power management applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 2.8A (Tc) at 25°C. The SQ1470EH-T1-GE3 offers a low on-resistance (Rds On) of 65mOhm at 3.8A and 4.5V gate-source voltage (Vgs), facilitating reduced conduction losses. With a gate charge (Qg) of 6.6 nC at 4.5V and input capacitance (Ciss) of 610pF at 25V, it exhibits favorable switching characteristics. The threshold voltage (Vgs(th)) is specified at a maximum of 1.6V for 250µA. Packaged in a compact SC-70-6 (SOT-363) surface-mount configuration, this component is suitable for space-constrained designs in industries such as consumer electronics, industrial automation, and automotive systems. The device is supplied in Digi-Reel® packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 3.8A, 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.6V @ 250µA |
| Supplier Device Package | SC-70-6 |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 610 pF @ 25 V |