SQ1420EEH-T1-GE3
MOSFET N-CH 60V 1.6A SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SQ1420EEH-T1-GE3 is an N-Channel Power MOSFET designed for demanding applications. This component features a 60V drain-to-source voltage (Vds) and a continuous drain current (Id) of 1.6A at 25°C (Tc). The low on-resistance (Rds On) of 140mOhm at 1.2A and 10V gate-source voltage (Vgs) ensures efficient power transfer. Key parameters include a gate charge (Qg) of 4 nC maximum at 4.5V Vgs and an input capacitance (Ciss) of 215 pF maximum at 25V Vds. The Vishay Siliconix SQ1420EEH-T1-GE3 utilizes Surface Mount technology, housed in a compact SC-70-6 (6-TSSOP, SC-88, SOT-363) package. This device is suitable for use in various industries including automotive and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 1.2A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SC-70-6 |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 215 pF @ 25 V |