SMM2348ES-T1-GE3
MOSFET N-CH 30V 8A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SMM2348ES-T1-GE3 is a 30V N-Channel Power MOSFET designed for efficient power management. This component features a low on-resistance of 24mOhm at 12A and 10V Vgs, maximizing power transfer and minimizing heat generation. With a continuous drain current (Id) of 8A (Tc) and a maximum power dissipation of 3W (Tc), it is suitable for applications requiring robust current handling. The SOT-23-3 (TO-236) surface mount package offers a compact footprint for space-constrained designs. Operating across a wide temperature range of -55°C to 175°C (TJ), it is engineered for reliability in demanding environments. Key electrical characteristics include a gate charge (Qg) of 14.5 nC (max) at 10V Vgs and input capacitance (Ciss) of 540 pF (max) at 15V Vds. This device finds application in power supplies, battery management, and consumer electronics.
Additional Information
Series: TrenchFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 15 V |
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