SISS98DN-T1-GE3
MOSFET N-CH 200V 14.1A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix ThunderFET® SISS98DN-T1-GE3 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a 200V drain-to-source voltage (Vdss) and a continuous drain current of 14.1A at 25°C (Tc), with a maximum power dissipation of 57W (Tc). The SISS98DN-T1-GE3 is housed in a PowerPAK® 1212-8 surface mount package, facilitating compact board designs. Its low on-resistance of 105mOhm at 7A and 10V (Vgs) minimizes conduction losses. Key parameters include a gate charge (Qg) of 14 nC (max) at 7.5V and input capacitance (Ciss) of 608 pF (max) at 100V. This MOSFET is suitable for various industrial applications, including power supplies, motor control, and lighting. It operates across a wide temperature range of -55°C to 150°C (TJ).
Additional Information
Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 57W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 7.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 608 pF @ 100 V |
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