SISS94DN-T1-GE3
MOSFET N-CH 200V 5.4A/19.5A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® N-Channel MOSFET, part number SISS94DN-T1-GE3, offers robust performance with a 200V drain-source voltage. This device features a continuous drain current capability of 5.4A at ambient temperature (Ta) and 19.5A at case temperature (Tc). The PowerPAK® 1212-8S package enables efficient thermal management, supporting a maximum power dissipation of 5.1W (Ta) and 65.8W (Tc). Key electrical characteristics include a maximum Rds(on) of 75mOhm at 5.4A and 10V drive, with low gate charge (Qg) of 21 nC at 10V and input capacitance (Ciss) of 350 pF at 100V. The operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in industrial power supplies and automotive systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8S |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Ta), 19.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 5.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.1W (Ta), 65.8W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8S |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 100 V |
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