SISS92DN-T1-GE3
MOSFET N-CH 250V 3.4A/12.3A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SISS92DN-T1-GE3 is an N-channel Power MOSFET from the TrenchFET® series, designed for demanding power conversion applications. This device features a 250V Drain-Source Voltage (Vdss) and offers continuous drain current capabilities of 3.4A at 25°C ambient (Ta) and 12.3A at 25°C case (Tc). With a maximum power dissipation of 5.1W (Ta) and 65.8W (Tc), it utilizes the PowerPAK® 1212-8S surface mount package. Key electrical characteristics include a maximum Rds(On) of 173mOhm at 3.6A and 10V, an input capacitance (Ciss) of 350pF at 125V, and a gate charge (Qg) of 16nC at 10V. The operating temperature range is -55°C to 150°C (TJ). This component is commonly found in industrial, automotive, and renewable energy systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8S |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta), 12.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 173mOhm @ 3.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.1W (Ta), 65.8W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8S |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 125 V |
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