SISS73DN-T1-GE3
MOSFET P-CH 150V 4.4A/16.2A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SISS73DN-T1-GE3 is a P-Channel TrenchFET® MOSFET designed for demanding power applications. This component features a Drain to Source Voltage (Vdss) of 150 V and offers a continuous drain current capability of 4.4 A at ambient temperature (Ta) and 16.2 A at case temperature (Tc). The device dissipates a maximum of 5.1 W at Ta and 65.8 W at Tc. With a low Rds On of 125 mOhm at 10 A and 10 V, it minimizes conduction losses. The SISS73DN-T1-GE3 is housed in a surface mount PowerPAK® 1212-8S package, supplied on tape and reel. Key parameters include a gate charge (Qg) of 22 nC at 10 V and an input capacitance (Ciss) of 719 pF at 75 V. It operates within a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in sectors such as automotive, industrial power, and consumer electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8S |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Ta), 16.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.1W (Ta), 65.8W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8S |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 719 pF @ 75 V |
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