SISS72DN-T1-GE3
MOSFET N-CH 150V 7A/25.5A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SISS72DN-T1-GE3 is an N-Channel Power MOSFET designed for demanding applications. This device features a maximum drain-source voltage (Vdss) of 150V and offers a continuous drain current (Id) of 7A at ambient temperature and 25.5A at case temperature, with continuous power dissipation capabilities of 5.1W (Ta) and 65.8W (Tc). The low on-resistance (Rds On) is specified at 42mOhm maximum at 7A and 10V gate drive. Key parameters include a gate charge (Qg) of 22 nC maximum at 10V and input capacitance (Ciss) of 550 pF maximum at 75V. The SISS72DN-T1-GE3 is housed in a surface-mount PowerPAK® 1212-8S package, suitable for operation across a wide temperature range of -55°C to 150°C. This component is commonly utilized in power supply, motor control, and industrial automation sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8S |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta), 25.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.1W (Ta), 65.8W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8S |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 75 V |
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