SISS71DN-T1-GE3
MOSFET P-CH 100V 23A PPAK1212-8SManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix ThunderFET® P-Channel MOSFET, part number SISS71DN-T1-GE3, offers a 100V drain-source voltage and 23A continuous drain current at 25°C case temperature. This device features a P-Channel MOSFET technology with a maximum power dissipation of 57W (Tc). The SISS71DN-T1-GE3 is housed in a surface-mount PowerPAK® 1212-8S package, supplied on tape and reel. Key electrical characteristics include a maximum Rds On of 59mOhm at 5A and 10V Vgs, with a Vgs(th) of 2.5V (max) at 250µA. Input capacitance (Ciss) is rated at 1050pF (max) at 50V, and gate charge (Qg) is 15nC (max) at 4.5V. This component is suitable for applications requiring robust power switching in industrial and automotive sectors. It operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8S |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 57W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8S |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1050 pF @ 50 V |
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