SISS70DN-T1-GE3
MOSFET N-CH 125V 8.5A/31A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SISS70DN-T1-GE3 is an N-Channel Power MOSFET designed for efficient power conversion applications. This device features a 125 V breakdown voltage (Vds) and supports a continuous drain current of 8.5 A at ambient temperature (Ta) and up to 31 A at case temperature (Tc). The low on-resistance (Rds On) of 29.8 mOhm at 8.5 A and 10 V gate drive voltage minimizes conduction losses. With a maximum power dissipation of 5.1 W (Ta) and 65.8 W (Tc), this MOSFET is suitable for demanding thermal environments. Key electrical characteristics include a gate charge (Qg) of 15.3 nC (max) and input capacitance (Ciss) of 535 pF (max). The Vishay Siliconix TrenchFET® series is frequently utilized in power management, automotive systems, and industrial power supplies. The component is housed in a PowerPAK® 1212-8S surface mount package and supplied on tape and reel. Operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8S |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Ta), 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 29.8mOhm @ 8.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.1W (Ta), 65.8W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8S |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 125 V |
| Gate Charge (Qg) (Max) @ Vgs | 15.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 535 pF @ 62.5 V |
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