SISS588DN-T1-GE3
N-CHANNEL 80 V (D-S) MOSFET POWEManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix N-Channel TrenchFET® Gen V MOSFET, part number SISS588DN-T1-GE3, is an 80V power MOSFET designed for demanding applications. This surface mount device in a PowerPAK® 1212-8S package offers exceptional performance with a maximum Rds(on) of 8mOhm at 10A and 10V. It supports a continuous drain current of 16.9A at 25°C ambient and 58.1A at 25°C case temperature, with a maximum power dissipation of 4.8W (ambient) and 56.8W (case). Key electrical parameters include a gate charge (Qg) of 28.5 nC at 10V and input capacitance (Ciss) of 1380 pF at 40V. Operating over a temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for use in power management, automotive, and industrial sectors.
Additional Information
Series: TrenchFET® Gen VRoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8S |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16.9A (Ta), 58.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4.8W (Ta), 56.8W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8S |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 28.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1380 pF @ 40 V |
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