SISS5808DN-T1-GE3
N-CHANNEL 80 V (D-S) MOSFET POWEManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® SISS5808DN-T1-GE3 is an N-channel Power MOSFET designed for demanding applications. This device features a Vds of 80V and a continuous drain current capability of 18.3A at 25°C ambient and 66.6A at 25°C case temperature. The SISS5808DN-T1-GE3 offers a low on-resistance of 119mOhm maximum at 3.5A and 10V. With a maximum power dissipation of 5W (ambient) and 65.7W (case), it is suitable for power management solutions in automotive and industrial sectors. The component is housed in a PowerPAK® 1212-8S surface mount package and supplied on tape and reel. Key specifications include a gate charge of 24nC maximum at 10V, input capacitance of 1210pF maximum at 40V, and a gate-source voltage range of ±20V. The threshold voltage is 4V maximum at 250µA.
Additional Information
Series: TrenchFET®RoHS Status: unknownManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8S |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18.3A (Ta), 66.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 119mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 65.7W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8S |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1210 pF @ 40 V |
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