SISS5710DN-T1-GE3
N-CHANNEL 150 V (D-S) MOSFET POWManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SISS5710DN-T1-GE3 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 150V and a continuous drain current rating of 7.2A at 25°C ambient temperature, escalating to 26.2A under continuous drain at case temperature. The device offers a low on-resistance (Rds On) of 31.5mOhm maximum at 10A and 10V gate-source voltage, contributing to reduced conduction losses.
The SISS5710DN-T1-GE3 utilizes TrenchFET® technology for enhanced performance. Key electrical characteristics include a maximum gate charge (Qg) of 15 nC at 10V and input capacitance (Ciss) of 770 pF maximum at 75V. It is packaged in a PowerPAK® 1212-8S surface mount configuration and operates within an extended temperature range of -55°C to 150°C. Power dissipation is rated at 4.1W (Ta) and 54.3W (Tc). This MOSFET is suitable for use in industrial, automotive, and consumer electronics sectors demanding robust power management solutions.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8S |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.2A (Ta), 26.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 31.5mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4.1W (Ta), 54.3W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8S |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 770 pF @ 75 V |
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