SISS5708DN-T1-GE3
N-CHANNEL 150 V (D-S) MOSFET POWManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SISS5708DN-T1-GE3 is an N-Channel TrenchFET® power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 150V and a continuous drain current (Id) of 9.3A at 25°C ambient and 33.8A at 25°C case temperature. The SISS5708DN-T1-GE3 offers a low on-resistance (Rds On) of 23mOhm maximum at 10A, 10V, contributing to efficient power management. With a maximum power dissipation of 5W ambient and 65.7W case temperature, this MOSFET is suitable for power supplies, automotive systems, and industrial automation. The PowerPAK® 1212-8S surface mount package ensures thermal performance. Key parameters include a Gate Charge (Qg) of 20 nC maximum at 10V and an Input Capacitance (Ciss) of 975 pF maximum at 75V. It operates across a wide temperature range from -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8S |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.3A (Ta), 33.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 65.7W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8S |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 975 pF @ 75 V |
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