SISS5623DN-T1-GE3
P-CHANNEL 60 V (D-S) MOSFET POWEManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel MOSFET, part number SISS5623DN-T1-GE3, features a 60V drain-source breakdown voltage and a low on-resistance of 24mOhm at 10A, 10V. This device offers continuous drain current capabilities of 10.5A at ambient temperature (Ta) and 36.3A at case temperature (Tc). With a maximum power dissipation of 4.8W (Ta) and 56.8W (Tc), it is housed in a compact PowerPAK® 1212-8S surface mount package, supplied on tape and reel. Key parameters include a 33nC gate charge (Qg) and 1575pF input capacitance (Ciss). This MOSFET is suitable for applications requiring efficient power switching in automotive and industrial sectors. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8S |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.5A (Ta), 36.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4.8W (Ta), 56.8W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8S |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1575 pF @ 30 V |
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