SISS5112DN-T1-GE3
N-CHANNEL 100 V (D-S) MOSFET POWManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SISS5112DN-T1-GE3 is an N-Channel TrenchFET® Power MOSFET designed for high-efficiency power switching applications. This component offers a 100 V drain-to-source voltage (Vds) and a continuous drain current (Id) of 11 A at 25°C ambient temperature, increasing to 40.7 A under 25°C case temperature conditions. With a low on-resistance (Rds On) of 14.9 mOhm maximum at 10 A and 10 V Vgs, it minimizes conduction losses. The device features a maximum power dissipation of 3.7 W (Ta) and 52 W (Tc), with a low thermal resistance. Key parameters include a gate charge (Qg) of 16 nC maximum at 10 V Vgs and input capacitance (Ciss) of 790 pF maximum at 50 V Vds. The SISS5112DN-T1-GE3 is housed in a PowerPAK® 1212-8S surface-mount package. This MOSFET is suitable for use in industrial, automotive, and computing applications requiring robust power management solutions.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8S |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 40.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 14.9mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8S |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 50 V |
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