SISS5110DN-T1-GE3
N-CHANNEL 100 V (D-S) MOSFET POWManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SISS5110DN-T1-GE3 is an N-Channel Power MOSFET from the TrenchFET® series. This device features a 100 V drain-to-source breakdown voltage (Vdss) and offers a continuous drain current (Id) of 13.4 A at 25°C ambient and 46.4 A at 25°C case temperature. The ultra-low on-resistance (Rds On) is specified at 8.9 mOhm maximum at 10 A and 10 V gate-source voltage. With a maximum power dissipation of 4.8 W (Ta) and 56.8 W (Tc), this MOSFET is suitable for demanding applications. It is housed in a compact PowerPAK® 1212-8S surface mount package and operates across a temperature range of -55°C to 150°C. Key parameters include a gate charge (Qg) of 20 nC maximum and input capacitance (Ciss) of 920 pF maximum. This component is widely utilized in power management, automotive, and industrial control systems.
Additional Information
Series: TrenchFET®RoHS Status: unknownManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8S |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.4A (Ta), 46.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.9mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4.8W (Ta), 56.8W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8S |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 920 pF @ 50 V |
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