SISS5108DN-T1-GE3
N-CHANNEL 100-V (D-S) MOSFET POWManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SISS5108DN-T1-GE3 is a N-Channel MOSFET designed for demanding power applications. This device features a 100 V drain-source voltage (Vdss) and offers a continuous drain current of 15.4 A at 25°C ambient temperature and 55.9 A at 25°C case temperature. Its low on-resistance (Rds On) of 10.5 mOhm at 10 A and 10 V gate-source voltage (Vgs) ensures efficient power transfer. The SISS5108DN-T1-GE3 is housed in a compact PowerPAK® 1212-8S surface mount package, supporting a maximum power dissipation of 5 W (Ta) or 65.7 W (Tc). With a nominal gate charge (Qg) of 23 nC and input capacitance (Ciss) of 1150 pF, this MOSFET is suitable for use in automotive and industrial power management systems. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: unknownManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8S |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15.4A (Ta), 55.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 65.7W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8S |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 50 V |
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