SISS40DN-T1-GE3
MOSFET N-CH 100V 36.5A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix ThunderFET® SISS40DN-T1-GE3 is an N-Channel Power MOSFET designed for demanding applications. This device features a 100V drain-source breakdown voltage and a continuous drain current of 36.5A at 25°C (Tc). The low on-resistance of 21mOhm at 10A and 10V gate-source voltage, coupled with a maximum gate charge of 24nC at 10V, ensures efficient switching performance. With a maximum power dissipation of 52W (Tc), it is suitable for high-power density designs. The MOSFET is housed in a compact PowerPAK® 1212-8S surface mount package, ideal for rigorous thermal management. This component is commonly utilized in automotive, industrial power control, and telecommunication infrastructure.
Additional Information
Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8S |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8S |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 845 pF @ 50 V |
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