SISS12DN-T1-GE3
MOSFET N-CH 40V 37.5A/60A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® Gen IV SISS12DN-T1-GE3 is an N-Channel Power MOSFET designed for demanding applications. This device features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 37.5A at 25°C ambient and 60A when measured at the case temperature. With a low on-resistance (Rds On) of 1.98mOhm at 10A and 10Vgs, it offers excellent conduction efficiency. The SISS12DN-T1-GE3 is housed in a PowerPAK® 1212-8S surface mount package, enabling high power density with a maximum power dissipation of 65.7W at the case temperature. Key electrical characteristics include a gate charge (Qg) of 89 nC maximum at 10Vgs and input capacitance (Ciss) of 4270 pF maximum at 20Vds. This component is suitable for use in power management, automotive, and industrial applications. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: TrenchFET® Gen IVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8S |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 37.5A (Ta), 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.98mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 65.7W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8S |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +20V, -16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 89 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4270 pF @ 20 V |
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