SISS10DN-T1-GE3
MOSFET N-CH 40V 60A PPAK 1212-8SManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SISS10DN-T1-GE3 is an N-channel power MOSFET designed for high-efficiency power switching applications. This device features a 40V drain-source breakdown voltage and a continuous drain current capability of 60A at 25°C (Tc). The low on-resistance of 2.65mOhm maximum at 15A and 10V gate drive makes it suitable for demanding power conversion tasks. With a maximum power dissipation of 57W (Tc), it offers robust thermal performance. The SISS10DN-T1-GE3 utilizes the PowerPAK® 1212-8S surface-mount package for compact integration. Key electrical characteristics include a gate charge (Qg) of 75 nC maximum at 10V and input capacitance (Ciss) of 3750 pF maximum at 20V. This component is commonly employed in automotive, industrial power supplies, and battery management systems. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8S |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.65mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 57W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8S |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +20V, -16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3750 pF @ 20 V |
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