SISA34DN-T1-GE3
MOSFET N-CH 30V 40A PPAK1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® Gen IV SISA34DN-T1-GE3 is an N-channel Power MOSFET designed for demanding applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 40A (Tc). With a maximum power dissipation of 20.8W (Tc) and a low on-resistance of 6.7mOhm @ 10A, 10V, it offers excellent efficiency. The SISA34DN-T1-GE3 utilizes a PowerPAK® 1212-8 surface mount package for optimal thermal performance. Key parameters include a gate charge of 12 nC @ 4.5V and input capacitance of 1100 pF @ 15V. Operating temperature ranges from -55°C to 150°C. This component is suitable for use in power management, automotive, and industrial systems.
Additional Information
Series: TrenchFET® Gen IVRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.7mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20.8W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +20V, -16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 15 V |
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