SISA18DN-T1-GE3
MOSFET N-CH 30V 38.3A PPAK1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SISA18DN-T1-GE3 is an N-Channel TrenchFET® MOSFET designed for efficient power switching applications. This device features a 30V drain-source voltage rating and a continuous drain current capability of 38.3A at 25°C (Tc). With a maximum on-resistance (Rds(on)) of 7.5mOhm at 10A and 10V gate-source voltage, it offers low conduction losses. The SISA18DN-T1-GE3 is housed in a PowerPAK® 1212-8 surface mount package, enabling high power density. It supports a wide gate drive range from 4.5V to 10V and has a maximum gate charge of 21.5 nC. Key electrical parameters include an input capacitance (Ciss) of 1000 pF at 15V and power dissipation ratings of 3.2W (Ta) and 19.8W (Tc). This component is suitable for use in automotive, industrial, and high-performance computing sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 38.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.2W (Ta), 19.8W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +20V, -16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 21.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 15 V |
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