SIS892DN-T1-GE3
MOSFET N-CH 100V 30A PPAK1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIS892DN-T1-GE3 is an N-Channel Power MOSFET from the TrenchFET® series. It features a 100V drain-source breakdown voltage and a continuous drain current rating of 30A at 25°C (Tc). With a low on-resistance of 29mOhm maximum at 10A and 10V, this device offers efficient power handling. The MOSFET is housed in a PowerPAK® 1212-8 surface-mount package, designed for optimal thermal performance with a maximum power dissipation of 52W (Tc) and 3.7W (Ta). Key parameters include a gate charge of 21.5 nC at 10V and input capacitance of 611 pF at 50V. The operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in power management, automotive systems, and industrial equipment.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 21.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 611 pF @ 50 V |
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