SIS892ADN-T1-GE3
MOSFET N-CH 100V 28A PPAK1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIS892ADN-T1-GE3 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 100V drain-source breakdown voltage and a continuous drain current capability of 28A at 25°C (Tc), with a maximum power dissipation of 52W (Tc). Optimized for low on-resistance, it exhibits a maximum Rds(on) of 33mOhm at 10A and 10V, achievable with gate drive voltages as low as 4.5V. The device is housed in a compact PowerPAK® 1212-8 surface-mount package, facilitating high-density board designs. Key electrical characteristics include a gate charge (Qg) of 19.5 nC at 10V and input capacitance (Ciss) of 550 pF at 50V. Operating across an extended temperature range of -55°C to 150°C, this MOSFET is suitable for use in various industrial and automotive power management systems. The SIS892ADN-T1-GE3 employs Vishay's TrenchFET® technology for enhanced performance.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 19.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 50 V |
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