SIS890DN-T1-GE3
MOSFET N-CH 100V 30A PPAK1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIS890DN-T1-GE3 is a 100V N-Channel TrenchFET® MOSFET designed for high-efficiency power conversion. This component features a 30A continuous drain current capability at 25°C (Tc) and a low on-resistance of 23.5mOhm maximum at 10A, 10V. The PowerPAK® 1212-8 package offers robust thermal performance with a maximum power dissipation of 52W (Tc). Key parameters include a gate charge (Qg) of 29 nC at 10V and input capacitance (Ciss) of 802 pF at 50V. This MOSFET is suitable for applications in power supplies, automotive systems, and industrial power management. It operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 23.5mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 802 pF @ 50 V |
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