SIS888DN-T1-GE3
MOSFET N-CH 150V 20.2A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix ThunderFET® SIS888DN-T1-GE3 is an N-Channel Power MOSFET designed for demanding applications. This device features a 150V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 20.2A at 25°C (Tc). The SIS888DN-T1-GE3 offers a low on-resistance (Rds On) of 58mOhm maximum at 10A and 10V, crucial for minimizing conduction losses. With a maximum power dissipation of 52W (Tc), it supports efficient thermal management. The MOSFET utilizes a PowerPAK® 1212-8S surface mount package, ideal for high-density designs. Key electrical characteristics include a gate charge (Qg) of 14.5 nC maximum at 10V and input capacitance (Ciss) of 420 pF maximum at 75V. This component is suitable for use in industrial, automotive, and power supply applications. The operating temperature range is -55°C to 150°C (TA).
Additional Information
Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8S |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TA) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 52W (Tc) |
| Vgs(th) (Max) @ Id | 4.2V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8S |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 420 pF @ 75 V |
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