SIS778DN-T1-GE3
MOSFET N-CH 30V 35A PPAK1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIS778DN-T1-GE3 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 30V drain-source voltage rating and a continuous drain current capability of 35A at 25°C (Tc), with a maximum power dissipation of 52W (Tc). The low on-resistance of 5mOhm at 10A and 10V (Vgs) minimizes conduction losses. Key parameters include a gate charge (Qg) of 42.5 nC (max) at 10V (Vgs) and an input capacitance (Ciss) of 1390 pF (max) at 15V (Vds). The SIS778DN-T1-GE3 incorporates a body diode with Schottky characteristics, enhancing its performance in switching applications. It is housed in a surface-mount PowerPAK® 1212-8 package, suitable for demanding thermal management. This component is widely utilized in automotive, industrial, and consumer electronics power management solutions. The operating temperature range is -50°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 10A, 10V |
| FET Feature | Schottky Diode (Body) |
| Power Dissipation (Max) | 52W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 42.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1390 pF @ 15 V |
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