SIS626DN-T1-GE3
MOSFET N-CH 25V 16A PPAK1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIS626DN-T1-GE3 is an N-Channel Power MOSFET designed for efficient power management. This component features a 25V drain-source voltage (Vdss) and a continuous drain current (Id) of 16A at 25°C. With a low on-resistance (Rds On) of 9mOhm at 10A and 10V, it minimizes conduction losses. The device offers a maximum power dissipation of 52W (Tc) and is housed in a compact Surface Mount PowerPAK® 1212-8 package. Key parameters include a gate charge (Qg) of 60nC at 10V and an input capacitance (Ciss) of 1925pF at 15V. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is suitable for applications in power supplies, battery management systems, and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 52W (Tc) |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1925 pF @ 15 V |
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