SIS612EDNT-T1-GE3
MOSFET N-CH 20V 50A PPAK1212-8SManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIS612EDNT-T1-GE3 is an N-Channel Power MOSFET designed for demanding applications. This TrenchFET® series component features a 20V drain-source voltage rating and a continuous drain current capability of 50A at 25°C (Tc). With a maximum Rds(on) of 3.9mOhm at 14A and 4.5V Vgs, it offers efficient power handling. The device operates over a wide temperature range of -55°C to 150°C. Key electrical parameters include a gate charge of 70 nC at 10V and input capacitance of 2060 pF at 10V. It is supplied in a PowerPAK® 1212-8S surface mount package, available on tape and reel. The low on-resistance and high current density make it suitable for power management solutions in automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8S |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.9mOhm @ 14A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | 1.2V @ 1mA |
| Supplier Device Package | PowerPAK® 1212-8S |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2060 pF @ 10 V |
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