SIS5712DN-T1-GE3
MOSFET N-CH 150V 2.2A PPAK1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix TrenchFET® SIS5712DN-T1-GE3 is an N-channel power MOSFET designed for demanding applications. This component features a 150V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 5.6A at 25°C ambient, scaling to 18A under continuous drain conditions at 25°C case temperature. With a low on-resistance (Rds On) of 55.5mOhm maximum at 5.6A and 10V Vgs, it minimizes conduction losses. The device offers a maximum power dissipation of 3.7W (Ta) and 39.1W (Tc), operating across a temperature range of -55°C to 150°C. Key parameters include a gate charge (Qg) of 11.3 nC maximum at 10V Vgs and input capacitance (Ciss) of 500 pF maximum at 75V Vds. This MOSFET is housed in a PowerPAK® 1212-8 surface-mount package, suitable for high-density power designs. Applications include power switching, motor control, and power management systems across various industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Ta), 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 55.5mOhm @ 5.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 39.1W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 75 V |
| Qualification | - |
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